• Title of article

    Exchange interaction effects in the crossing of spin-polarized Landau levels in a silicon-germanium heterostructure: transition into a ferromagnetic state

  • Author/Authors

    U. Zeitler، نويسنده , , H.W. Schumacher، نويسنده , , J. Regul، نويسنده , , R.J Haug، نويسنده , , P. Weitz، نويسنده , , A.G.M. Jansen، نويسنده , , F. Schaffler، نويسنده ,

  • Issue Information
    دوهفته نامه با شماره پیاپی سال 2000
  • Pages
    5
  • From page
    288
  • To page
    292
  • Abstract
    The crossing of spin-split Landau levels in a Si/SiGe heterostructure is investigated by means of magneto-transport experiments in tilted magnetic fields. We observe a transition from a paramagnetic into a fully spin polarized state. During the transition strongly enhanced maxima in the transverse resistivity ρxx appear when the parallel field component is oriented along the Hall bar. We assign this effect to an energy level structure strongly modified by exchange interaction effects between different Landau levels. Surprisingly the maximum in ρxx totally disappears when the parallel field component is perpendicular to the Hall bar.
  • Keywords
    Exchange interaction , Silicon-germanium , Coincidence experiments , Quantum Hall effect
  • Journal title
    Physica E Low-dimensional Systems and Nanostructures
  • Serial Year
    2000
  • Journal title
    Physica E Low-dimensional Systems and Nanostructures
  • Record number

    1049639