Title of article
Exchange interaction effects in the crossing of spin-polarized Landau levels in a silicon-germanium heterostructure: transition into a ferromagnetic state
Author/Authors
U. Zeitler، نويسنده , , H.W. Schumacher، نويسنده , , J. Regul، نويسنده , , R.J Haug، نويسنده , , P. Weitz، نويسنده , , A.G.M. Jansen، نويسنده , , F. Schaffler، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2000
Pages
5
From page
288
To page
292
Abstract
The crossing of spin-split Landau levels in a Si/SiGe heterostructure is investigated by means of magneto-transport experiments in tilted magnetic fields. We observe a transition from a paramagnetic into a fully spin polarized state. During the transition strongly enhanced maxima in the transverse resistivity ρxx appear when the parallel field component is oriented along the Hall bar. We assign this effect to an energy level structure strongly modified by exchange interaction effects between different Landau levels. Surprisingly the maximum in ρxx totally disappears when the parallel field component is perpendicular to the Hall bar.
Keywords
Exchange interaction , Silicon-germanium , Coincidence experiments , Quantum Hall effect
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2000
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1049639
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