Title of article
Intersubband and interminiband GaAs/AlGaAs quantum cascade lasers
Author/Authors
G Strasser، نويسنده , , S Gianordoli، نويسنده , , L Hvozdara، نويسنده , , W Schrenk، نويسنده , , E Gornik، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2000
Pages
7
From page
1
To page
7
Abstract
Electrically pumped injection lasers based on the GaAs/AlGaAs material system are investigated. Intersubband transitions in coupled quantum wells and intraband transitions in a finite superlattice are used to demonstrate lasing. The laser emission wavelength is View the MathML source for the intersubband lasers and View the MathML source for the laser structure having a finite superlattice as an active cell. Utilizing ridge waveguide laser bars at a heat-sink temperature of 10 K, peak optical powers of the intersubband quantum cascade lasers exceed 300 mW (interminiband: 100 mW). The maximum operating temperature is 160 K (interminiband: 50 K). Cylindrical micro-cavities show single-mode behavior with a side mode suppression ratio better than 25 dB for both kinds of lasers.
Keywords
Semiconductor lasers , Quantum cascade lasers , Micro-cavities , Superlattices
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2000
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1049670
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