Monte Carlo particle modeling of electron transport and capture processes in AlGaAs/GaAs multiple quantum-well infrared photodetectors

We study steady-state and transient electron transport and capture effects in n-AlGaAs/GaAs multiple quantum-well infrared photodetectors utilizing bound-to-continuum transitions using an ensemble Monte Carlo particle modeling. It is shown that nonequilibrium distributions of electrons over the conduction band valleys essentially determine the characteristics of these devices. The macroscopic capture parameter is calculated as a function of the electric field. We show also that monotonic electric-field distributions can be unstable with the excitation of the wave of quantum-well recharging. As a result of the instability, quasi-periodic domain structures in quantum-well infrared photodetectors can be formed.