Title of article
Nonlinear photogalvanic effect induced by monopolar spin orientation of holes in QWs
Author/Authors
S.D Ganichev، نويسنده , , S.N Danilov، نويسنده , , V.V Belʹkov، نويسنده , , E.L. Ivchenko، نويسنده , , H Ketterl، نويسنده , , L.E. Vorobjev، نويسنده , , M Bichler، نويسنده , , W Wegscheider، نويسنده , , W Prettl، نويسنده ,
Issue Information
ماهنامه با شماره پیاپی سال 2001
Pages
5
From page
52
To page
56
Abstract
We report on the first observation of the circular photogalvanic effect (CPGE) induced by optical monopolar spin orientation of holes in p-doped quantum-well structures. It is shown that monopolar optical spin orientation of free carriers causes an electric current which reverses its direction upon changing from left to right circularly polarized radiation. The effect has been observed in (001)- and (311)A-oriented p-GaAs/AlGaAs quantum wells at normal incidence of far-infrared radiation. The photocurrent is proportional to the light intensity at low power levels and gradually saturates with increasing intensity. The CPGE can be utilized to investigate separately spin polarization of electrons and holes and to determine spin-relaxation times.
Keywords
Photogalvanic effect , Monopolar spin orientation
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2001
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1049890
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