Mean-field theory of magnetic properties of MnxIII1−xV semiconductors

We present a mean-field theory of carrier-induced ferromagnetism in MnxIII1−xV diluted magnetic semiconductors with a special emphasis placed on the magnetic anisotropy. The valence band holes are described using the six band Kohn–Luttinger model. We find that the magnetic anisotropy is a complicated function of sample parameters such as hole density or strain. Results of our numerical simulations are in agreement with magnetic anisotropy measurements on samples with both compressive and tensile strains.