Tilted field effects in quantum Hall multilayers

We examine the effects of threading magnetic flux through the chiral metal that forms near the surface of 3D semiconductor multilayers in the regime of the quantum Hall effect. In low-temperature studies of GaAs/AlGaAs multilayers, we find that the response of the sheath of edge states to fields Bplane along the planes of the multilayer depends on whether Bplane is perpendicular or parallel to this chiral metal. The ν=1 and 2 edge-state sheaths respond differently to fields Bplane that are perpendicular to the sheath.