Zero field spin-splitting and Rashba parameter in inversion layers on p-InAs mosfets: results of fully numerical multi-band computations

The sub-band spin splitting of the energy levels due to spin–orbit and the strong surface electric field is computed self-consistently for electrons in InAs mosfets using the envelope function approximation and the 8×8 Kane Hamiltonian. The concomitant Rashba parameter is studied as a function of areal electron density where at the Fermi level it shows unexpected and counter-intuitive behaviors due to its k-dependence which cannot be neglected.