Title of article
Variable-range hopping in the quantum Hall regime
Author/Authors
F. Hohls، نويسنده , , U. Zeitler، نويسنده , , R.J Haug، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2002
Pages
4
From page
670
To page
673
Abstract
We examine the scaling behavior of the transition between adjacent quantum Hall plateaus away from the critical point in the regime of variable-range hopping driven conductivity σxx. The measured temperature and frequency dependence is used for a direct evaluation of the localization length ξ. We find scaling behavior ξ∝|δν|−γ up to large filling factor distances |δν| to the critical point. The scaling exponent γ=2.3 agrees with its proposed universal value even for samples which do not show universal behavior within the usual transition-width analysis. This demonstrates the advantage of our variable-range hopping analysis and the robustness of the localization length scaling.
Keywords
Scaling , Quantum Hall effect , Variable-range hopping , Plateau transition
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2002
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1050190
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