Title of article
Electrical spin injection from Fe into GaAs at room temperature
Author/Authors
M Ramsteiner، نويسنده , , H.J. Zhu، نويسنده , , H.-P Sch?nherr، نويسنده , , K.H. Ploog، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2002
Pages
4
From page
529
To page
532
Abstract
Injection of spin-polarized electrons is observed at a ferromagnet–semiconductor interface by analyzing the electroluminescence signal of a GaAs/(In,Ga)As light emitting diode covered with Fe. The circular polarization degree of the light emission at room temperature reveals a spin injection efficiency of at least 2% from Fe into GaAs. The underlying injection mechanism is explained in terms of a tunneling process.
Keywords
Spin injection , Ferromagnetic metal , III–V semiconductor , Electroluminescence
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2002
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1050358
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