Two-way current switch using Coulomb blockade in GaAs quantum dots by selective area metalorganic vapor phase epitaxy

We fabricated a two-way current switch by selective area metalorganic vapor phase epitaxy and showed their characteristics as path switch based on a Coulomb blockade phenomena. Two-way current switch was realized by integrating two quantum dot (QD) devices having two types (control/main) of gate electrodes. Coulomb oscillation were observed as a function of both control and main gate voltage in each QD-devices (QDDs). It was also found that the phase of the Coulomb oscillations for the main gate could be controlled by tuning the control gate voltage. We demonstrated the switching between two current paths at appropriate bias conditions where Coulomb oscillation of two QDDs was complementary.