Quantum dots for VCSEL applications at λ=1.3 μm

GaAs-based vertical cavity surface-emitting lasers (VCSELs) using self-organized quantum dots (QDs) emitting at View the MathML source demonstrate device-acceptable parameters. Threshold currents below View the MathML source, operation voltage below View the MathML source and differential efficiency in excess of 60% are demonstrated. Maximum CW output power of View the MathML source is realized for View the MathML source oxide-confined aperture device. Using fully oxidized top and bottom distributed Bragg reflectors allows reducing the total thickness of the structure to only 5–View the MathML source. Lifetime and temperature cycling tests confirm high reliability of the device. Confinement of nonequilibrium carriers in the QDs facilitates applications in VCSEL arrays with ultrasmall apertures and microcavities. Low homogeneous line width in single QDs makes potentially possible realization of single QD VCSELs.