Two modes of Ga diffusion into InAs self-assembled quantum dots suggested by ion channeling

InAs self-assembled quantum dots (SAQDs) is structurally investigated as a function of growth interruption time from 0 to View the MathML source. Deformation of In increased as growth interruption time increased. Also, a strong correlation between the In deformation and photoluminescence (PL) peak wavelength was found. Deformation of Ga was reduced when the growth interruption time was changed from 0 to View the MathML source, increased from 30 to View the MathML source and saturated beyond View the MathML source. These results suggest a presence of two different mechanisms of Ga diffusion into QDs.