Magneto-optical study of Er+3-related center in selectively doped Si:Er

Photoluminescence at View the MathML source from an Er3+-related center dominant in a sublimation MBE-grown multi-layer Si/Si:Er structure is investigated in magnetic fields up to View the MathML source. The magnetic-field-induced splitting is observed for all the main lines of the Er-related photoluminescence spectrum. For the most intense emission line, angular dependence of the splitting is measured in the (011) crystallographic plane of the sample. The effective g-tensor, corresponding to the difference between individual g-tensors of the lowest multiplets of the ground and the first excited states, is experimentally determined. In this way the symmetry of the Er-related optically active center dominant in the structure is found to be orthorhombic I (C2v). From temperature dependence of the intensity of the magnetic field split components, individual g-tensors of the ground and the excited states are separated. No influence of the growth direction on the symmetry of Er-related center was found.