Title of article
Spin accumulation in ferromagnetic single-electron transistors
Author/Authors
J. Martinek، نويسنده , , J. Barnas، نويسنده , , S. Maekawa، نويسنده , , H. Schoeller، نويسنده , , G. Sch?n، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2003
Pages
2
From page
54
To page
55
Abstract
We propose a new method of direct detection of spin accumulation, which overcomes difficulties met in earlier measurements. A spin dependent current in a single-electron transistor with ferromagnetic electrodes leads to a nonequilibrium spin accumulation on the metallic island. Owing to the charging energy, the resulting spin-splitting of the electrochemical potential of the island can be detected from the spacing between two resonances in the current–voltage characteristics. The effect can be observed both in the sequential and cotunneling limits.
Keywords
Single-electron transistor , Spin-dependent transport , Spin accumulation
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2003
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1050662
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