Nonmagnetic control of spin transport in InGaAs quantum wells

We have studied the Rashba constant values α in the In0.52Al0.48As/In0.53Ga0.47As quantum wells (QW), as a function of the degree of the structural inversion asymmetry (SIA), using the weak antilocalization analysis. We control the SIA of the QWs both by the specific sample design and by the applied gate voltage. The deduced α values are in a quantitative agreement with the theoretical values obtained in the View the MathML source-type calculation. We, then, propose a novel spin-filter device solely based on the Rashba effect as an example of the devices that utilize the Rashba spin–orbit coupling effect.