Title of article
On the suitability of DD and HD models for the simulation of nanometer double-gate MOSFETs
Author/Authors
Ralf Granzner، نويسنده , , V.M. Polyakov، نويسنده , , F Schwierz، نويسنده , , M Kittler، نويسنده , , T Doll، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2003
Pages
6
From page
33
To page
38
Abstract
The drain currents of nanometer double-gate MOSFETs with gate lengths in the range from 100 to View the MathML source are calculated using a hierarchy of simulation approaches. By comparing Monte Carlo (MC), drift-diffusion (DD), and hydrodynamic (HD) simulation results the suitability of the DD and HD models for the investigation of the on- and subthreshold currents of nano-scaled MOSFETs is tested. Modifications of the velocity-field characteristics in the DD simulations are suggested to improve the accuracy of the DD model.
Keywords
Drift-diffusion , Scaled MOSFET , Double-gate MOSFET , simulation , Monte Carlo
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2003
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1050809
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