A theoretical study of atomistic effects on the quantum hydrodynamics of carriers in decanano semiconductor devices using non-self-averaged Green functions

Recent developments in silicon MOSFET nanoelectronics point the way to devices having channel dimensions in the range down to a few nm. At these atomistic scales only a finite number of impurities occur in the device volume and it is demonstrated that the Kohn–Luttinger self-averaging ansatz and consequently standard Green function perturbation theory must fail. A non-self-averaged T-matrix approach is instead proposed for a model system of randomly distributed hard sphere potentials which utilises the interference between the non-asymptotic exact partial-wave scattering from each impurity using the method of images to build in the effects of confinement by the device boundaries. The quantum hydrodynamic representation is used to discuss the resulting current flows through the model device.