Ballistic transport in InSb quantum wells at high temperature

Measurements were made on a View the MathML source four-terminal device, fabricated from an InSb/Al0.15In0.85Sb quantum well structure, at temperatures from 1.5 to View the MathML source. Negative bend resistance, a signature of ballistic transport, was observed at temperatures up to View the MathML source. The disappearance of the negative bend resistance at higher temperatures was accompanied by a non-linear dependence of the Hall voltage on magnetic field. The non-linearity indicates multiple-carrier conduction, which we characterize using quantitative mobility spectrum analysis.