Frequency-dependent C(V) spectroscopy of the hole system in InAs quantum dots

The hole system in InAs quantum dots was investigated by frequency-dependent capacitance–voltage spectroscopy. Up to eight distinct charging peaks could be observed and the energy difference between the individual peaks could be estimated. All charging peaks decrease with increasing measurement frequency; however, the lower the energy of the hole level the stronger the decrease. A comparison with the results of the electron system in similar quantum dots yields that for all hole levels the effective mass in the barrier is much larger than in the electron system.