Title of article
Bose–Einstein statistics behaviors of exciton–biexciton photoluminescence decay processes in a GaAs/AlAs type-II superlattice
Author/Authors
M Nakayama، نويسنده , , H Ichida، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2004
Pages
5
From page
651
To page
655
Abstract
We have investigated the Bose–Einstein (BE) statistics behavior of the exciton–biexciton (EX–BEX) system during the photoluminescence decay processes at View the MathML source in a (GaAs)12/(AlAs)12 type-II superlattice. Owing to the long lifetime of the type-II exciton, which is of the order of microseconds due to the indirect transition nature, we have precisely evaluated the density relation between the EX and BEX from the line-shape analysis of time-resolved photoluminescence spectra. At an EX density around 1×1010/cm2, the BEX density suddenly increases with a threshold-like profile. This behavior is quantitatively explained by the framework of BE statistics of the EX–BEX system. It is demonstrated that the threshold-like increase of the BEX density is recurred by the incidence of a second-excitation pulse with a time delay, which leads to the dynamical control of the BE statistics behavior.
Keywords
Exciton , Biexciton , Bose–Einstein statistics , GaAs/AlAs type-II superlattice
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2004
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1051048
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