InAs/InP quantum dot microcavities employing dielectric Bragg mirrors

We investigate the optical emission characteristics of InAs/InP quantum dot microcavities emitting around View the MathML source. Planar and etched-pillar-type microcavities employing multi-layer dielectric Bragg mirrors are demonstrated. For planar cavities we observe a large increase in the cavity mode emission as a function of increasing temperature above View the MathML source, which is interpreted in terms of carrier trapping within the wetting layer. Pillar-type microcavities show the discrete mode structure expected for full three-dimensional optical confinement.