Magneto-optical properties and Curie temperature (∼130 K) of heavily Mn-doped quaternary alloy ferromagnetic semiconductor (InGaMn)As grown on InP

We have studied the magnetic properties of heavily Mn-doped [(In0.44Ga0.56)0.79Mn0.21]As thin films grown by low-temperature molecular-beam epitaxy on InP substrates. The (InGaMn)As with high Mn content (21%) was obtained by decreasing the growth temperature to 190°C. When the thickness of the [(In0.44Ga0.56)0.79Mn0.21]As layer is equal or less than View the MathML source, the reflection high-energy electron diffraction pattern and transmission electron microscopy show no MnAs clustering, indicating that a homogeneous single crystal with good quality was grown. In the magnetic circular dicroism (MCD) measurement, large MCD intensity and high Curie temperature of View the MathML source were observed.