MBE growth and magnetic properties of InMnN diluted magnetic semiconductor

A new type nitride-based diluted magnetic semiconductors In1−xMnxN films was prepared on Al2O3 substrate at different temperatures by RF-plasma-assisted molecular beam epitaxy. Reflection high-energy electron diffraction, X-ray diffraction and atomic force microscope show that Mn can be homogeneously incorporated into InN up to 4% and 10% respectively at 300°C and 200°C. The average c-axis lattice constant decreases with increasing Mn composition. The homogeneous In1−xMnxN films grown at low temperature (200°C) with low Mn composition x=0.04 displayed a paramagnetic behavior at low temperature, whereas a paramagnetic to spin-glass transition was observed for the sample with x=0.1 at about View the MathML source. Room temperature ferromagnetism was observed in the highly doped inhomogeneous In1−xMnxN film grown at higher temperature (300°C).