Title of article
Interacting GaAs bilayer hole systems with layer density imbalance
Author/Authors
E. Tutuc، نويسنده , , S. Melinte، نويسنده , , E.P. De Poortere، نويسنده , , R. Pillarisetty، نويسنده , , M. Shayegan، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2004
Pages
4
From page
32
To page
35
Abstract
We study interacting GaAs hole bilayers in the limit of zero interlayer tunneling. When the layers have equal density, we observe a phase coherent bilayer quantum Hall state (QHS) at total filling factor ν=1, flanked by a reentrant insulating phase at nearby fillings which suggests the formation of a pinned, bilayer Wigner crystal. As we transfer charge from one layer to another, the phase coherent QHS becomes stronger, while the insulating phase disappears, suggesting that its stability requires the commensurability of the two layers.
Keywords
Two-dimensional , Bilayer , Wigner crystal
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2004
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1051151
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