Title of article
Two-dimensional metallic state in silicon-on-insulator structures
Author/Authors
G. Brunthaler، نويسنده , , B. Lindner، نويسنده , , G. Pillwein، نويسنده , , S. Griesser، نويسنده , , M. Prunnila، نويسنده , , J. Ahopelto، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2004
Pages
4
From page
252
To page
255
Abstract
In silicon-on-insulator metal oxide semiconductor structures with a peak mobility of View the MathML source a strong drop of the resistivity towards low temperature has been observed. This metallic effect can be fitted by a linear-in-T term, which can be interpreted with both, the ballistic interaction corrections and the temperature dependent screening of impurity scattering. At low temperature and density in addition a strong increase of the resistivity towards lower T was observed, which is attributed to the contact regions of the sample.
Keywords
2D Metal-insulator transition , Si inversion layer , Silicon-on-insulator
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2004
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1051204
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