Transformation of the Fermi surface and anisotropy phenomena in 2D hole gas at GaAs/AlxGa1−xAs heterointerface under uniaxial stress

By numerical calculation the Fermi surface of two-dimensional (2D) holes at p-GaAs/AlxGa1−xAs heterointerface is found to become strongly anisotropic under the application of in-plane uniaxial compression. This uniaxial stress-induced anisotropy of the energy spectrum reveals in more that two times increase of 2D hole mobility anisotropy (at uniaxial compression about View the MathML source), that is experimentally detected in such heterostructures. It leads also to considerable anisotropy of far-infrared absorption spectrum; absorption of light with polarization perpendicular to the direction of compression is smaller that the absorption of light with polarization parallel to the direction of compression.