Title of article
Study of post-growth annealing and Ga coverage effects in low-density GaAs/AlGaAs quantum dots grown by modified droplet epitaxy
Author/Authors
V Mantovani، نويسنده , , S Sanguinetti، نويسنده , , M Guzzi، نويسنده , , E Grilli، نويسنده , , M Gurioli، نويسنده , , K Watanabe، نويسنده , , N Koguchi، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2004
Pages
7
From page
377
To page
383
Abstract
We present a detailed analysis of the Ga coverage and of the post-growth annealing effects on the optical properties of very-low-density self-assembled GaAs/AlGaAs quantum dots grown by modified droplet epitaxy. Through theoretical calculation of the QD electronic states, including thermally activated Al–Ga interdiffusion processes, we were able to relate our spectroscopic observations to QD structural properties.
Keywords
A3. Molecular beam epitaxy , B2. semiconducting III–V materials , A1. Quantum Dots
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2004
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1051399
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