Title of article
MBE growth of GaAs/AlGaAs quantum well on a patterned GaAs (0 0 1) substrate
Author/Authors
M Yamaguchi، نويسنده , , Y Nishimoto، نويسنده , , N Sawaki، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2004
Pages
5
From page
143
To page
147
Abstract
A GaAs/AlGaAs quantum well (QW) was grown on a stripe-patterned (0 0 1) GaAs substrate with conventional molecular beam epitaxy. A mesa structure was formed with (0 0 1) facet on the top and (1 1 1) facet on the sides. It was found that the thickness of the QW layer on the (0 0 1) facet is controlled by the inter-surface diffusion of Ga adatoms from the (1 1 1) side facets. The behavior was investigated as a function of V/III ratio and the growth temperature.
Keywords
MBE , Quantum well , GaAs , Inter-surface diffusion , Diffusion length
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2004
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1051447
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