Title of article
Carrier capture and relaxation of self-assembled ZnTe/ZnSe quantum dots prepared under Volmer–Weber and Stranski–Krastanow growth modes
Author/Authors
M.-E. Lee، نويسنده , , Y.-C. Yeh، نويسنده , , Y.-H. Chung، نويسنده , , C.-L. Wu، نويسنده , , C.-S. Yang، نويسنده , , W.-C. Chou، نويسنده , , C.-T. Kuo، نويسنده , , D.-J. Jang، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2005
Pages
5
From page
422
To page
426
Abstract
The carrier capture and relaxation of type II ZnTe/ZnSe quantum dots have been investigated with ultrafast time-resolved photoluminescence upconversion. The carrier capture times were 7 and 38 ps for the Volmer–Weber mode and Stranski–Krastanow mode, respectively. We found that the carrier relaxation of QDs exhibits faster decay under the Volmer–Weber growth mode than under the Stranski–Krastanow growth mode. We attribute the difference of carrier relaxation to the wetting layer formed in the Stranski–Krastanow growth mode.
Keywords
Auger process , Type II quantum dots , Carrier capture , Carrier relaxation , Time-resolved photoluminescence
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2005
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1051585
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