Title of article
Ballistic transport in InSb mesoscopic structures
Author/Authors
N. Goel، نويسنده , , J. Graham، نويسنده , , J.C Keay، نويسنده , , K. Suzuki، نويسنده , , S. Miyashita، نويسنده , , M.B. Santos، نويسنده , , Y. Hirayama، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2005
Pages
5
From page
455
To page
459
Abstract
Two different device geometries are fabricated to investigate ballistic transport of electrons in low-dimensional InSb structures. Negative bend resistance is observed in four-terminal devices of channel widths ranging from 0.2 to 0.65 μm. We also report the observation of conductance quantization in quantum point contacts fabricated using in-plane gates. The one-dimensional subbands depopulate with increasing transverse magnetic field up to 3 T. Zeeman splitting is resolved at magnetic fields above ∼0.9 T.
Keywords
Quantum point contact , Mesoscopic structures , InSb , Ballistic transport , Bend resistance
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2005
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1051592
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