Piezoelectric field-dependent optical nonlinearities induced by interband transition in InGaN/GaN quantum well

The binding energy of GaN/InGaN quantum well (QW) has been studied by taking the strain-induced piezoelectric and spontaneous polarization effects into account. The variational calculations are presented for the ground exciton state in the quantum wells, and the third-order susceptibilities, as functions of In content x, well width w, and pump photon energy ℏω, have also been analyzed. In addition, the results are compared with the data of previous work and some conclusions are given.