Model schematics of a nanoelectronic device based on multi-endo-fullerenes electromigration

We investigated a nanoelectronic device based on multi-endo-fullerenes shuttle memory element based on nanopeapods using classical molecular dynamics simulations. We suggested the model schematics of endo-fullerene shuttle memory device fabrication. The dynamics of electroemission of endo-fullerenes from the peapod were closely related to the height of the potential energy barrier closely related to the threshold electrostatic field intensity, the empty nano space inside the peapod for endo-fullerene acceleration, the number of endo-fullerenes affecting the correlated collisions, the initial configuration of endo-fullerene in the peapod, and the period of the external electrostatic field. The endo-fullerene shuttle memory element could operate a nonvolatile nanomemory device. The switching speed, the applied force field, and the active region should be considered to design the endo-fullerene shuttle memory element.