Title of article
Structural and optical analysis of size-controlled InAs quantum dashes
Author/Authors
T. Kümmell، نويسنده , , A. Sauerwald، نويسنده , , Michael A. Somers، نويسنده , , A. L?ffler، نويسنده , , J.P. Reithmaier، نويسنده , , A. Forchel، نويسنده , , A. Forchel and G. Bacher ، نويسنده ,
Issue Information
ماهنامه با شماره پیاپی سال 2006
Pages
3
From page
108
To page
110
Abstract
Self-organized InAs and InGaAs quantum dashes have been investigated by chemically sensitive scanning transmission electron microscopy and photoluminescence spectroscopy. The quantum dashes exhibit a triangular cross section. Using electron energy loss spectroscopy, we show that no intermixing between quantum dashes and embedding barrier occurs during growth. By adjusting the nominal thickness of the InAs layer, the emission wavelength of the InAs quantum dashes can be tuned between 1.37 and 1.9 μm in a straightforward way.
Keywords
Quantum dashes , Scanning transmission electron microscopy , Electron energy loss spectroscopy , Z-contrast , InAs/InGaAlAs
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2006
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1051806
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