Title of article
Hanle effect measurements of spin relaxation in self-assembled CdSe quantum dots
Author/Authors
A. O. Maksimov ، نويسنده , , X. Zhou، نويسنده , , M.C. Tamargo، نويسنده , , N. Samarth، نويسنده ,
Issue Information
ماهنامه با شماره پیاپی سال 2006
Pages
4
From page
399
To page
402
Abstract
We use the Hanle effect to study spin relaxation in self-assembled CdSe quantum dots embedded in a Be0.03Zn0.97Se matrix. We measure a short transverse spin lifetime in the sub nanosecond range (0.31–0.35 ns) at 4.2 K. We propose that strong phonon and/or impurity scattering, due to unintentional contamination, limit the spin coherence time in CdSe/Be0.03Zn0.97Se QDs.
Keywords
CdSe , Quantum dots , Hanle effect , Spin relaxation
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2006
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1051879
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