Spin injection and accumulation in inhomogeneous semiconductors

We present a study of spin transport in charge and spin inhomogeneous semiconductor systems. In particular, we investigate the propagation of spin-polarized electrons through a boundary between two semiconductor regions with different doping concentrations. We use a theoretical and numerical method, presented in this paper, based on a self-consistent treatment of a two-component version of the Boltzmann transport equation. We show that space–charge effects strongly influence the spin transport properties, in particular giving rise to pronounced spin accumulation and spin density enhancement.