• Title of article

    Ferromagnetic Ge(Mn) nanostructures

  • Author/Authors

    S. Ahlers، نويسنده , , D. Bougeard، نويسنده , , H. Riedl، نويسنده , , G. Abstreiter، نويسنده , , A. Trampert، نويسنده , , W. Kipferl، نويسنده , , M. Sperl، نويسنده , , A. Bergmaier، نويسنده , , G. Dollinger، نويسنده ,

  • Issue Information
    ماهنامه با شماره پیاپی سال 2006
  • Pages
    4
  • From page
    422
  • To page
    425
  • Abstract
    We present structural, magnetic and transport properties of Mn-doped Ge layers grown by molecular beam epitaxy (MBE) at low substrate temperatures TS. Atomic force microscopy (AFM), reflection high energy electron diffraction (RHEED) and transmission electron microscopy (TEM) analysis of structures grown at View the MathML source and View the MathML source reveal defect-free epitaxy of Ge(Mn) on Ge(0 0 1) substrates. Despite the low TS we observe the formation of round shaped clusters with a diameter of 15–20 nm which are incoherent with the Ge matrix in TEM analysis for a Mn concentration x of 3.4%. SQUID measurements reveal ferromagnetism and a TC of around View the MathML source for the layers, reminiscent of the intermetallic compound Mn5Ge3. Transport measurements, however, indicate that Mn is incorporated into the Ge matrix between the Mn5Ge3 clusters as well.
  • Keywords
    Ge , Mn , GeMn , DMS , Mn5Ge3 , Germanium , Ferromagnetic semiconductor , manganese
  • Journal title
    Physica E Low-dimensional Systems and Nanostructures
  • Serial Year
    2006
  • Journal title
    Physica E Low-dimensional Systems and Nanostructures
  • Record number

    1051885