• Title of article

    Metal–insulator transition in the 2DEG in image-Si:GaAs under pressure

  • Author/Authors

    E. Dizhur، نويسنده , , A. Voronovsky، نويسنده , , A. Fedorov، نويسنده , , I. Kotel’nikov، نويسنده , , S. Dizhur، نويسنده ,

  • Issue Information
    ماهنامه با شماره پیاپی سال 2006
  • Pages
    4
  • From page
    628
  • To page
    631
  • Abstract
    The high pressure induced variation of the band structure of GaAs was used to change free carrier density in 2D layer formed by near-to-surface delta-doped GaAs. Simultaneous measurements of lateral resistivity and tunnel spectra showed that under pressure of about 1.7 GPa a metal–insulator transition occurs in 2DEG.
  • Keywords
    2DEG , Delta doping , High pressure , Tunneling , MIT
  • Journal title
    Physica E Low-dimensional Systems and Nanostructures
  • Serial Year
    2006
  • Journal title
    Physica E Low-dimensional Systems and Nanostructures
  • Record number

    1052087

    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=10&DC=1052087