Title of article
Integer quantum Hall effect on hydrogen-passivated silicon (1 1 1) surfaces
Author/Authors
K. Eng، نويسنده , , R.N. McFarland، نويسنده , , B.E. Kane، نويسنده ,
Issue Information
ماهنامه با شماره پیاپی سال 2006
Pages
2
From page
701
To page
702
Abstract
We report magnetoresistance measurements of a high-mobility two-dimensional electron system induced on a hydrogen-passivated Si(1 1 1) surface. At temperatures of View the MathML source and magnetic fields up to 12 T, signatures of the integer quantum Hall effect with the lowest Landau filling factor of 2 have been observed.
Keywords
Silicon , Quantum Hall effect , High mobility
Journal title
Physica E Low-dimensional Systems and Nanostructures
Serial Year
2006
Journal title
Physica E Low-dimensional Systems and Nanostructures
Record number
1052106
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