Coulomb blockade sensors based on nanostructured mesoporous silicon

Mesoporous silicon (mesoPS) is a nanosponge where Si nanocrystals are interconnected forming a disordered 3D array. The electronic characteristics of this material are particularly interesting, due to some intriguing effects, such as a huge increase of conductivity, reversible insulator-to-metal transition and n- or p-type doping of the nanocrystals, exhibited in presence of donor or acceptor molecules like NH3 and NO2. Here we report on the observation of a sharp conductance gap, which can be ascribed to Coulomb blockade phenomena. Moreover, we show that the width of the gap can be tuned by NO2 molecules, so that the fabrication of highly sensitive threshold sensors is possible. Our results suggest that electrochemical etching of heavily doped Si can be used as a simple self-assembly technique for the production of Si nanocrystal arrays and for the fabrication of sensitive nanosensors.