Title of article
Carriers recombination in bilayer organic light-emitting diodes at high electric fields Original Research Article
Author/Authors
Shengyi Yang، نويسنده , , Zhenjia Wang، نويسنده , , Zheng Xu، نويسنده , , Yanbing Hou، نويسنده , , Xurong Xu، نويسنده ,
Issue Information
هفته نامه با شماره پیاپی سال 2001
Pages
7
From page
267
To page
273
Abstract
Based on the Fowler–Nordheim tunneling theory at high electric fields, a model of carriers recombination in organic double-layer light-emitting diodes is presented in this paper. We provide the formula expressions of the carriers recombination current density as function of factors such as the injection barrier, anodic electric field and thickness ratio of cathodic layer to anodic layer, and discuss the influence of these factors on the recombination current density and recombination efficiency. Being in accord with the experiments very well, we find it is reasonable to elucidate the controlling role of electric field on recombination region.
Keywords
Charge carriers , High electric fields , Fowler–Nordheim tunneling , Bilayer organic light-emitting diodes
Journal title
Chemical Physics
Serial Year
2001
Journal title
Chemical Physics
Record number
1056256
Link To Document