X-ray analysis and band gap measurement of Cu In1−xGaxSe2 films

Thin film Cu In1−xGaxSe2 solar cells have been fabricated and studied over the range 0 ≤ x ≤ 1. X-ray diffraction analysis showed that the films with x ≤ 0.5 have a chalcoprite structure and the films with x ≥ 0.5 have a zinc blende structure. The variation of lattice parameters with composition was found to obey Vegards law. The variation in band gap with composition was determined for these films from optical absorption measurement, which showed that the band gap varied linearly over composition range. Grain size was measured using scanning electron microscopy (SEM) where the grain size measured linearly with the Ga content.