Title of article
Study of indium tin oxide thin film for separative extended gate ISFET
Author/Authors
Li-Te Yin، نويسنده , , Jung-Chuan Chou، نويسنده , , Wen-Yaw Chung، نويسنده , , Tai-ping Sun، نويسنده , , Shen-Kan Hsiung، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2001
Pages
5
From page
12
To page
16
Abstract
In this study, the indium tin oxide (ITO) was used as a sensitive film for H+ ion sensitive field effect transistor (ISFET). The sensitive characteristics of ITO glass structure for separative extended gate ion sensitive field effect transistors (EGFET) were studied. ITO thin film is used for the first time as a H+ ion sensitive film which has a linear pH sensitivity of Nerstern response, about 58 mV/pH, between pH 2 and pH 12.
Keywords
Indium tin oxide , EGFET , ISFET , pH sensitivity
Journal title
Materials Chemistry and Physics
Serial Year
2001
Journal title
Materials Chemistry and Physics
Record number
1060528
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