Title of article
Structural and electrical transport properties of CdS0.9Se0.1:In thin films: effect of film thickness
Author/Authors
G.S Shahane، نويسنده , , L.P. Deshmukh a، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2001
Pages
5
From page
112
To page
116
Abstract
Thin films of CdS0.9Se0.1:In (0.05 mol%) of various thicknesses have been deposited on to the clean glass substrates using a chemical deposition technique. Composition analysis showed that films were sulphur deficit. Structural investigations on these films revealed the polycrystalline nature of the films with the presence of hexagonal CdS0.9Se0.1 and cubic CdS phases. Grain size increased with the film thickness. Electrical conductivity and thermoelectric power (TEP) measurements have been carried out in 300–550 K temperature range. The conduction activation energy is found to be thickness-dependent. TEP measurements showed n-type conduction. Carrier concentration increased with thickness.
Keywords
CdS Se (In) thin films , Electrical conductivity , Grain size effect
Journal title
Materials Chemistry and Physics
Serial Year
2001
Journal title
Materials Chemistry and Physics
Record number
1060544
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