• Title of article

    Sensitivity and hysteresis effect in Al2O3 gate pH-ISFET

  • Author/Authors

    Jung-Chuan Chou، نويسنده , , Chen-Yu Weng، نويسنده ,

  • Issue Information
    دوهفته نامه با شماره پیاپی سال 2001
  • Pages
    5
  • From page
    120
  • To page
    124
  • Abstract
    In this study, we utilize the commercial device, Sentron 1090 Al2O3 gate pH-ISFET to study the sensitivity and hysteresis behavior. The experimental results show that the Al2O3 materials have a fairly high response, and the sensitivity was obtained from the pH response of Sentron 1090.
  • Keywords
    Al2O3 gate pH-ISFET , Hysteresis , Response , sensitivity
  • Journal title
    Materials Chemistry and Physics
  • Serial Year
    2001
  • Journal title
    Materials Chemistry and Physics
  • Record number

    1060604

    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=10&DC=1060604