Title of article
Photoelectrochemical characterization of chemically deposited (CdS)X(Bi2S3)1−X composite thin films
Author/Authors
R.R Ahire، نويسنده , , B.R Sankapal، نويسنده , , C.D. Lokhande، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2001
Pages
8
From page
48
To page
55
Abstract
(CdS)X(Bi2S3)1−X composite thin films were chemically deposited using simple successive ionic layer adsorption and reaction (SILAR) method onto glass and fluorine doped tin oxide (FTO) coated glass substrates. The films were annealed in air at 200°C for 2 h and used to fabricate photoelectrochemical cells of configuration: (CdS)X(Bi2S3)1−X/Na2SSNaOH/C and their properties, such as current–voltage (I–V), photovoltaic output, spectral response, capacitance–vo1tage (Mott–Schotttty plots), etc. It is found that the (CdS)X(Bi2S3)1−X composite thin films are photoactive. The effect of composition ‘X’ on these properties was studied.
Keywords
Photoelectrochemical cells , (CdS)X(Bi2S3)1?X composite thin films , SILAR
Journal title
Materials Chemistry and Physics
Serial Year
2001
Journal title
Materials Chemistry and Physics
Record number
1060641
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