Hardness of C, CNx and AlN thin films after rapid thermal annealing

The hardness and elastic modulus of C, CNx and AlN thin films after rapid thermal annealing have been investigated using nanoindentation and microhardness measurements techniques. The thin films have been deposited on silicon by plasma enhanced chemical vapor deposition using CCl4, ksilol and NH3 as precursors for CNx layers. The film thickness was between 30 and 150 nm. Carbon and AlN thin films have been prepared using rapid thermal annealing. It has been found that the highest values for hardness (17.7 GPa) correspond to the samples prepared with CCl4 and NH3 as precursors, and subjected to rapid thermal annealing at 1400 K min−1.