Title of article
Effect of V doping on the band-gap reduction of porous TiO2 films prepared by sol–gel route
Author/Authors
Zhifeng Liu، نويسنده , , Jing Ya، نويسنده , , Lei E، نويسنده , , Ying Xin، نويسنده , , Wei Zhao، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2010
Pages
5
From page
277
To page
281
Abstract
V-doped TiO2 porous films had been prepared on glass substrates via sol–gel method using polyethylene glycol (PEG) as organic template. The model concerning the pore formation and change of the band-gap was discussed. The experiment results show that the porous structure can be obtained by phase separation caused by the chain change and self-assembly of PEG molecular. Sol concentration and PEG content have important roles in porous structure formation. Moreover, the band-gap presents a gradual decrease from 3.28 eV to 2.82 eV with the increase of the V doping content from 0 to 0.2 in V-TiO2 film.
Keywords
Sol–gel growth , electron microscopy , Microstructure , Thin film
Journal title
Materials Chemistry and Physics
Serial Year
2010
Journal title
Materials Chemistry and Physics
Record number
1062159
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