Title of article
Electrical resistivity and microstructure of pressureless reactive sintered MoSi2–SiC composite
Author/Authors
Xiaoli Zhang، نويسنده , , Zhenlin Lu، نويسنده , , Zhihao Jin، نويسنده ,
Issue Information
دوهفته نامه با شماره پیاپی سال 2004
Pages
5
From page
16
To page
20
Abstract
The electrical resistivity of MoSi2–SiC composites containing different SiC contents were measured and formulated by topological method. The theoretical result and the experimental value were in good agreement with each other. It is indicated that the electrical resistivity of the bulk composites can be increased by increasing volume fractions of the higher electrical resistivity of SiC phase and reducing the MoSi2 phase. The best fitting function may predict the SiC volume fractions and microstructures of the electrical resistivity composites, and give a guideline for material design.
Keywords
MoSi2–SiC , Composite , Resistivity , Contiguity
Journal title
Materials Chemistry and Physics
Serial Year
2004
Journal title
Materials Chemistry and Physics
Record number
1062507
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