Research on the direct doping effect of silicon on cubic boron nitride ceramics by UV–VIS diffuse reflectance

Cubic boron nitride (cBN) micro-powders mixed with 1 wt% silicon were sintered at 1450 °C under a pressure of 5.0 GPa. The grain boundaries and silicon distribution in Si-cBN ceramics were studied by scanning electronic microscope (SEM) and energy-dispersive spectrometer (EDS). Optical properties of the ceramics were investigated by UV–VIS diffuse reflectance and photoluminescence spectra at room temperature. Some important parameters of studied ceramics such as absorption coefficient and defect levels were identified from reflection spectra by intercept method. The experimental results indicated the direct n-doped effect of silicon on cubic boron nitride ceramics. With a direct forbidden transition characteristic, the donor energy level of Si in forbidden zone of cBN ceramics was found to be 2.82 eV. The phonon energy related to the direct forbidden transition was 0.235 eV.