Growth of the AlN nano-pillar crystal films by means of a halide chemical vapor deposition under atmospheric pressure

Preparation of AlN thin film has been examined by halide chemical vapor deposition technique using AlI3 and NH3 as starting materials under atmospheric pressure (AP-HCVD). The structural analysis of the deposited AlN films prepared on a Si(1 0 0) substrate by the AP-HCVD technique were carried out by the X-ray pole figure analysis. They consist of the hexagonal AlN nano-pillar crystals. It was found that the nano-pillar crystals, which have random rotation around the 〈1 0 0〉 axis, were grown at an angle of 80–90° to the substrate.